description: the central semiconductor cmxsh-3 type contains three (3) isolated schottky silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in a supermini? surface mount package, designed for applications requiring low forward voltage drop. marking code: xh3 maximum ratings (t a =25c) symbol units peak repetitive reverse voltage v rrm 30 v continuous forward current i f 100 ma peak repetitive forward current i frm 350 ma forward surge current, tp=10 ms i fsm 750 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =25v 90 500 na i r v r =25v, t a =100c 25 100 a bv r i r =100a 30 v v f i f =2.0ma 0.29 0.33 v v f i f =15ma 0.40 0.45 v v f i f =100ma 0.74 1.00 v c t v r =1.0v, f=1.0mhz 7.0 pf t rr i f =i r =10ma, i rr =1.0ma, r l =100 5.0 ns cmxsh-3 surface mount supermini tm triple isolated silicon schottky diodes sot-26 case central semiconductor corp. tm r4 (3-june 2005)
central semiconductor corp. tm sot-26 case - mechanical outline cmxsh-3 surface mount supermini tm triple isolated silicon schottky diodes r4 (3-june 2005) lead code 1) anode d1 2) anode d2 3) anode d3 4) cathode d3 5) cathode d2 6) cathode d1 marking code: xh3 12 3 6 5 4 d1 d2 d3 pin configuration
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